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| MSC82306 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS .REFRACTORY\ .VSWR .HERMETI .P PRELIMINARY DATA G OLD METALLIZATION CAPABILITY 20:1 @ RATED CONDITIONS C STRIPAC (R) PACKAGE OUT = 5.5 W MIN. WITH 9.6 dB GAIN .250 2LFL (S010) hermetically sealed ORDER CODE MSC82306 BRANDING 82306 PIN CONNECTION DESCRIPTION The MSC82306 is a common base hermetically sealed silicon NPN microwave power transistor utilizing a rugged overaly die geometry. This device is capable of withstanding 20:1 load VSWR at any phase angle under rated conditions. The MSC82306 was designed for Class C Amplifier/Oscillator applications in the 1.5 - 2.3 GHz frequency range. ABSOLUTE MAXIMUM RATINGS (T case = 25 C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base PDISS IC VCC TJ T STG Power Dissipation* Device Current* (TC 50C) 16.7 900 26 200 - 65 to +200 W mA V C C Collector-Supply Voltage* Junction Temperature Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 9.0 C/W *Applies only to rated RF amplifier operation October 1992 1/4 MSC82306 ELECTRICAL SPECIFICATIONS (T case = 25 C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO BVCER I CBO hFE DYNAMIC Symbol IC = 1mA IE = 1mA IC = 5mA VCB = 22V VCE = 5V IE = 0mA IC = 0mA RBE = 10 IC = 400mA 44 3.5 44 -- 30 -- -- -- -- -- -- -- -- 0.5 300 V V V mA -- Test Conditions Value Min. Typ. Max. Unit POUT c GP COB f = 2.3 GHz f = 2.3 GHz f = 2.3 GHz f = 1 MHz PIN = 0.6 W PIN = 0.6 W PIN = 0.6 W VCB = 22 V VCC = 22 V VCC = 22 V VCC = 22 V 5.5 40 9.6 -- 6.3 45 10.2 -- -- -- -- 7.0 W % dB pF 2/4 MSC82306 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE Z IN H M TYPICAL COLLECTOR LOAD IMPEDANCE ZCL L ZIN ZCL FREQ. L = 2.0 GHz H = 2.3 GHz ZIN () 2.60 + j 11.0 2.30 + j 14.5 ZCL () 4.1 - j 6.5 3.3 - j 9.0 2.8 - j 10.5 L M H PIN = 0.6 W VCC = 22 V Normalized to 50 ohms TEST CIRCUIT Ref.: Dwg. No. C125518 M = 2.15 GHz 2.75 + j 12.5 All dimensions are in inches. Frequency 2.3 GHz RF Amplifier Power Output Test 3/4 MSC82306 PACKAGE MECHANICAL DATA Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4 |
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